Title :
Explaining the dependences of the hole and electron mobilities in Si inversion layers
Author :
Pirovano, Agostino ; Lacaita, Andrea L. ; Zandler, Günther ; Oberhuber, Ralph
Author_Institution :
Dipt. di Elettronica, Politecnico di Milano, Italy
fDate :
4/1/2000 12:00:00 AM
Abstract :
In this work the hole surface roughness-limited mobility in Si MOSFETs is investigated. Based on full-band Monte Carlo simulations and on an equivalent relaxation-time numerical model, we show that the differences between hole and electron experimental mobilities are not due to any peculiar physics of the valence band. They can be instead accounted for by a suitable shape of the power spectrum describing the surface roughness. The new power spectrum explains the experimental dependences of both electron and hole mobilities using the same surface roughness parameters. Finally the spatial features of the roughness described by the new spectrum are discussed and compared to those represented by Gaussian and exponential auto-covariance functions
Keywords :
Gaussian distribution; MOSFET; Monte Carlo methods; covariance analysis; effective mass; electron mobility; elemental semiconductors; exponential distribution; hole mobility; inversion layers; semiconductor device models; silicon; surface scattering; surface topography; valence bands; Gaussian auto-covariance functions; MOSFET; Si; electron mobility; equivalent effective mass model; equivalent relaxation-time numerical model; exponential auto-covariance functions; full-band Monte Carlo simulations; hole mobility; inversion layers; power spectrum shape; spatial roughness features; surface roughness-limited mobility; valence band structure; Charge carrier processes; Degradation; Electron mobility; Light scattering; Monte Carlo methods; Numerical models; Physics; Rough surfaces; Shape; Surface roughness;
Journal_Title :
Electron Devices, IEEE Transactions on
