DocumentCode
1317571
Title
GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminium source
Author
Hobson, W.S. ; Levi, A.F.J. ; O´Gorman, J. ; Pearton, S.J. ; Abernathy, C.R. ; Swaminathan, Viswanathan
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
26
Issue
21
fYear
1990
Firstpage
1762
Lastpage
1764
Abstract
GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminium source, trimethylamine alane, have been successfully fabricated. Broad-area lasers made from the material have a threshold current density of 200 A cm-2. A V-grooved laser with a monolithically integrated intracavity loss modulator was used to vary the threshold current from Ith=15 mA at an absorber voltage of VS=2.5 V to Ith=210 mA for VS=-2.5 V.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GRINSCH laser structures; GaAs; GaAs-AlGaAs; OMVPE; V-grooved laser; absorber voltage; aluminium source; broad-area lasers; monolithically integrated intracavity loss modulator; threshold current density; trimethylamine alane;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901132
Filename
83099
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