Title :
A physical thermal noise model for SOI MOSFET
Author :
Jin, Wei ; Chan, Philip C.H. ; Lau, Jack
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fDate :
4/1/2000 12:00:00 AM
Abstract :
The recent progress in SOI technology necessitates an accurate thermal noise model for wide-band SOI analog IC design. In this paper a physical-based thermal noise model is proposed for floating-body SOI MOSFET operated in strong inversion regime and verified by the experimental data. In the model, both the lattice temperature (unique to SOI due to the buried oxide) and the carrier temperature (significant for short-channel device in saturation region) are considered. The model agrees well with the experimental data
Keywords :
MOSFET; equivalent circuits; semiconductor device models; semiconductor device noise; silicon-on-insulator; thermal noise; SOI MOSFET; Si; buried oxide; carrier temperature; floating-body SOI device; lattice temperature; physical thermal noise model; saturation region; short-channel device; strong inversion regime; wideband SOI analog IC design; Analog integrated circuits; CMOS technology; Integrated circuit modeling; Integrated circuit noise; Lattices; MOSFET circuits; Semiconductor device modeling; Silicon on insulator technology; Temperature; Wideband;
Journal_Title :
Electron Devices, IEEE Transactions on
