Title :
Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs
Author :
Mahapatra, S. ; Parikh, Chetan D. ; Rao, V. Ramgopal ; Viswanathan, Chand R. ; Vasi, Juzer
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Bombay, India
fDate :
4/1/2000 12:00:00 AM
Abstract :
The influence of channel length and oxide thickness on the hot-carrier induced interface (Nit) and oxide (Not) trap profiles is studied in n-channel LDD MOSFET´s using a novel charge pumping (CP) technique. The technique directly provides separate Nit and Not profiles without using simulation, iteration or neutralization, and has better immunity from measurement noise by avoiding numerical differentiation of data. The Nit and Not profiles obtained under a variety of stress conditions show well-defined trends with the variation in device dimensions. The Nit generation has been found to be the dominant damage mode for devices having thinner oxides and shorter channel lengths. Both the peak and spread of the Nit profiles have been found to affect the transconductance degradation, observed over different channel lengths and oxide thicknesses. Results are presented which provide useful insight into the effect of device scaling on the hot-carrier degradation process
Keywords :
MOSFET; hot carriers; interface states; semiconductor device measurement; channel length; charge pumping technique; device dimensions; device scaling effects; dominant damage mode; hot-carrier degradation process; hot-carrier induced interface charge distribution; n-channel LDD MOSFET; oxide thickness; oxide-trapped charge distributions; stress conditions; transconductance degradation; trap profiles; Charge pumps; Current measurement; Degradation; Hot carrier effects; Hot carriers; MOSFET circuits; Monitoring; Resistance heating; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
