The Simulation and Analysis of Recess-Gated GaN/AlGaN MOSFET RF Characteristics for Green-Energy Automobile Applications

Author

Jae Hwa Seo ; Young Jun Yoon ; Hwan Gi Lee ; Gwan Min Yoo ; Young Jae Kim ; Sung Yoon Kim ; Sung Yun Woo ; Hee Bum Roh ; Hye Rim Eun ; Hye Su Kang ; Seongjae Cho ; Jung-Hee Lee ; In Man Kang

Author_Institution

Sch. of Electron. Eng., Kyungpook Nat. Univ., Daegu, South Korea

fYear

2014

fDate

10-11 Jan. 2014

Firstpage

762

Lastpage

765

Abstract

A normally-off recess-gated GaN/AlGaN MOSFET which applicable at green-energy system and automobile SoC technology has been demonstrated. By recess-gated process, the transistor is operated as a normally-off device which has advantages for less power loss, and easy circuit design. After the GaN/AlGaN MOSFET device design, the DC and RF characteristics are extracted and analyzed by TCAD simulation process. The Ion of 250 mA/mm, SS of 200 mV/dec, VB of 60 V, fT of 2 GHz, and f_max of 2.5 GHz are obtained.

Keywords

III-V semiconductors; MOSFET; UHF field effect transistors; aluminium compounds; automotive electronics; gallium compounds; system-on-chip; wide band gap semiconductors; DC characteristics; GaN-AlGaN; MOSFET device design; TCAD simulation process; automobile SoC technology; circuit design; frequency 2 GHz; green-energy automobile applications; green-energy system; power loss; recess-gated MOSFET RF characteristics; voltage 60 V; Aluminum gallium nitride; Gallium nitride; HEMTs; Integrated circuit modeling; Logic gates; MOSFET; Radio frequency; Automobile application; GaN/AlGaN; Green energy; MOSFET; TCAD simulation; silicon substrate;

fLanguage

English

Publisher

ieee

Conference_Titel

Measuring Technology and Mechatronics Automation (ICMTMA), 2014 Sixth International Conference on

Conference_Location

Zhangjiajie

Print_ISBN

978-1-4799-3434-8

Type

conf

DOI

10.1109/ICMTMA.2014.187

Filename

6802805