Title :
A new substrate current model for submicron MOSFETs
Author :
Kolhatkar, Jay Sudhir ; Dutta, Aloke Kumar
Author_Institution :
Mentor Graphics Pvt. Ltd., Hyderabad, India
fDate :
4/1/2000 12:00:00 AM
Abstract :
In this paper, we present a new and improved substrate current model for submicron MOSFETs, which uses a simple analytical approximation of the ionization length near the drain, which in turn is based on a calculation of the electric field distribution near the drain region. The simulation results from our models for the ionization length as well as the substrate current are compared with the experimental results reported in literature, and a good match between the two is obtained
Keywords :
MOSFET; electric fields; impact ionisation; leakage currents; semiconductor device models; analytical approximation; drain region; electric field distribution; ionization length; submicron MOSFET; substrate current model; Analytical models; Current measurement; Doping; Impact ionization; Leakage current; MOSFET circuits; Physics; Semiconductor process modeling; Temperature sensors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
