DocumentCode
1317691
Title
A new substrate current model for submicron MOSFETs
Author
Kolhatkar, Jay Sudhir ; Dutta, Aloke Kumar
Author_Institution
Mentor Graphics Pvt. Ltd., Hyderabad, India
Volume
47
Issue
4
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
861
Lastpage
863
Abstract
In this paper, we present a new and improved substrate current model for submicron MOSFETs, which uses a simple analytical approximation of the ionization length near the drain, which in turn is based on a calculation of the electric field distribution near the drain region. The simulation results from our models for the ionization length as well as the substrate current are compared with the experimental results reported in literature, and a good match between the two is obtained
Keywords
MOSFET; electric fields; impact ionisation; leakage currents; semiconductor device models; analytical approximation; drain region; electric field distribution; ionization length; submicron MOSFET; substrate current model; Analytical models; Current measurement; Doping; Impact ionization; Leakage current; MOSFET circuits; Physics; Semiconductor process modeling; Temperature sensors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.831005
Filename
831005
Link To Document