Title :
RF potential of a 0.18-μm CMOS logic device technology
Author :
Burghartz, Joachim N. ; Hargrove, Michael ; Webster, Charlers S. ; Groves, Robert A. ; Keene, Michael ; Jenkins, Keith A. ; Logan, Ronald ; Nowak, Edward
Author_Institution :
DIMES, Delft Univ. of Technol., Netherlands
fDate :
4/1/2000 12:00:00 AM
Abstract :
The radio-frequency (RF) performance of a 0.18-μm CMOS logic technology is assessed by evaluating the cutoff and maximum oscillation frequencies (fT and fmax), the minimum noise figure (Fmin) and associated power gain (Ga), and the 1/f noise of the devices. Gate-biasing and channel-length and gate-finger-length adjustments are identified as means to optimize the RF performance without any technology process modifications. Changing to N2O gate dielectrics is shown to greatly reduce the 1/f noise without sacrificing the AC performance. The power amplifier characteristics of CMOS at low power levels are also discussed
Keywords :
1/f noise; CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; dielectric thin films; integrated circuit noise; integrated circuit technology; low-power electronics; 0.18 micron; 1/f noise; CMOS logic device technology; N2O; N2O gate dielectrics; RF performance optimisation; channel-length adjustments; cutoff frequency; deep submicron CMOS technology; gate biasing; gate-finger-length adjustments; low power levels; maximum oscillation frequency; minimum noise figure; power amplifier characteristics; power gain; radiofrequency performance; CMOS logic circuits; CMOS technology; Cutoff frequency; Dielectrics; Logic devices; Noise figure; Noise reduction; Performance gain; Radio frequency; Radiofrequency identification;
Journal_Title :
Electron Devices, IEEE Transactions on
