Title :
A three terminal varactor for RF IC´s in standard CMOS technology
Author :
Svelto, F. ; Manzini, S. ; Castello, R.
Author_Institution :
Dipt. di Ingegneria, Bergamo Univ., Dalmine, Italy
fDate :
4/1/2000 12:00:00 AM
Abstract :
A three terminal metal-oxide-silicon varactor operated between accumulation and deep depletion is proposed for RF IC´s. Prototypes, realized in a 0.35 μm standard CMOS technology, show a 3.1:1 capacitance tuning. The corresponding minimum Q is 23 at 1800 MHz. The proposed varactor lends itself as tuning element of VCO´s in highly integrated CMOS transceivers
Keywords :
CMOS analogue integrated circuits; MIS devices; Q-factor; UHF integrated circuits; UHF oscillators; circuit tuning; varactors; voltage-controlled oscillators; 0.35 micron; 1800 MHz; MOS varactor; RF IC; RFIC; VCO tuning element; accumulation; capacitance tuning; deep depletion; highly integrated CMOS transceivers; standard CMOS technology; three terminal varactor; CMOS integrated circuits; CMOS technology; Circuit optimization; Degradation; Immune system; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Tuning; Varactors;
Journal_Title :
Electron Devices, IEEE Transactions on
