• DocumentCode
    1318102
  • Title

    Simple method to extract gate voltage dependent source/drain resistance in MOSFETs

  • Author

    Lee, J.I. ; Lee, Matthew B. ; Lee, Y.J. ; Han, I.K. ; Kang, K.N. ; Park, K.O.

  • Author_Institution
    Opt. Electron. Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea
  • Volume
    26
  • Issue
    21
  • fYear
    1990
  • Firstpage
    1806
  • Lastpage
    1807
  • Abstract
    A simple and new method is presented and applied to a set of short channel LDD MOSFETs to extract gate-voltage dependent source/drain resistance in the linear region. The method utilises a well-known expression for the drain current in the strong inversion regime.
  • Keywords
    insulated gate field effect transistors; semiconductor device models; LDD FETs; MOSFETs; drain current; gate voltage dependent source/drain resistance; short channel FETs; source drain resistance extraction; strong inversion regime;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901156
  • Filename
    83123
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318102