DocumentCode
1318111
Title
Single quantum well edge emitting broadband LED
Author
Mantz, J. ; Hager, Harold ; Chan, Erwin Hoi Wing ; Hong, Choong
Author_Institution
Boeing High Technol. Center, Seattle, WA, USA
Volume
26
Issue
21
fYear
1990
Firstpage
1807
Lastpage
1809
Abstract
The use of a single quantum well structure in an effort to develop an edge emitting LED with an extremely broad spectral width has been studied. The device is unique in that it utilises the gain saturation effect in the quantum well structure to populate the quantised n=2 sublevel of the quantum well. The resultant device has an extremely broad output spectral width of over 95 nm (FWHM) and emits 3.2 mW at a drive current of 200 mA. The distinctive step-like spectral response exhibits two levels which can be attributed to the quantised n=1 and n=2 sublevels of the 100 AA single quantum well.
Keywords
light emitting diodes; semiconductor quantum wells; 100 A; 200 mA; 3.2 mW; broad spectral width; broadband LED; drive current; edge emitting LED; gain saturation effect; single quantum well structure; step-like spectral response;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901157
Filename
83124
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