• DocumentCode
    1318118
  • Title

    Design of linear tunable CMOS differential transconductor cells

  • Author

    Czarnul, Z. ; Takagi, Shinichi

  • Author_Institution
    Dept. of Phys. Electron., Int. Co-operation Center for Sci. & Technol., Tokyo Inst. of Technol., Japan
  • Volume
    26
  • Issue
    21
  • fYear
    1990
  • Firstpage
    1809
  • Lastpage
    1811
  • Abstract
    A general method for the construction of highly-linear CMOS differential transconductor cells (DTCs) is presented. Basic assumptions which allow several tunable CMOS transconductance cells to be formed are discussed. The method is based on the simplified square-law relationship of the MOSFET transistor. Extensive SPICE simulation results with MOSFET parameters as realistic as possible confirm the theory.
  • Keywords
    CMOS integrated circuits; insulated gate field effect transistors; linear integrated circuits; linear network synthesis; semiconductor device models; MOSFET parameters; MOSFET transistor; SPICE simulation results; highly-linear CMOS differential transconductor cells; simplified square-law relationship; tunable CMOS differential transconductor cells;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901158
  • Filename
    83125
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318118