Title :
Highly-linear transconductor cell realised by double MOS transistor differential pairs
Author :
Czarnul, Z. ; Fujii, Naotaka
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
A novel scheme for tunable transconductance cells with high linearity is described. The proposed configuration is realised by double MOS transistor differential pairs with two independent linear outputs, which can be employed separately as well as in a parallel or cross-coupled connection. A transconductance amplifier is shown as an application example. Computer simulation is used to verify the concept.
Keywords :
field effect integrated circuits; insulated gate field effect transistors; operational amplifiers; application example; cross-coupled connection; double MOS transistor differential pairs; high linearity; independent linear outputs; parallel connection; transconductance amplifier; tunable transconductance cells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901164
