DocumentCode
1318158
Title
Highly-linear transconductor cell realised by double MOS transistor differential pairs
Author
Czarnul, Z. ; Fujii, Naotaka
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Volume
26
Issue
21
fYear
1990
Firstpage
1819
Lastpage
1821
Abstract
A novel scheme for tunable transconductance cells with high linearity is described. The proposed configuration is realised by double MOS transistor differential pairs with two independent linear outputs, which can be employed separately as well as in a parallel or cross-coupled connection. A transconductance amplifier is shown as an application example. Computer simulation is used to verify the concept.
Keywords
field effect integrated circuits; insulated gate field effect transistors; operational amplifiers; application example; cross-coupled connection; double MOS transistor differential pairs; high linearity; independent linear outputs; parallel connection; transconductance amplifier; tunable transconductance cells;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901164
Filename
83131
Link To Document