• DocumentCode
    1318169
  • Title

    Fabrication of sub-50 nm poly-Si/SiO2/Si narrow wires using electron beam lithography and CF4/Q2 reactive ion etching

  • Author

    Tang, Y.S. ; Cheung, Ray ; Wilkinson, C.D.W.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • Volume
    26
  • Issue
    21
  • fYear
    1990
  • Firstpage
    1823
  • Lastpage
    1824
  • Abstract
    Poly-Si/SiO2/Si narrow wires with widths of less than 50 nm were fabricated using electron beam lithography and CF4+10% O2 reactive ion etching techniques. The extraction of optimum processing parameters for obtaining wires with nearly perpendicular sidewalls is reported.
  • Keywords
    electron beam lithography; elemental semiconductors; semiconductor quantum wells; silicon; sputter etching; 50 nm; electron beam lithography; fabrication; narrow wires; perpendicular sidewalls; polycrystaline Si-SiO 2-Si wires; polysilicon; processing parameters; reactive ion etching; tetrafluoromethane; width;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901166
  • Filename
    83133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318169