• DocumentCode
    1318175
  • Title

    20 Gbit/s time-division multiplexer IC in silicon bipolar technology

  • Author

    Hauenschild, J. ; Rein, H.-M. ; McFarland, W. ; Doernberg, J. ; Pettengill, D.

  • Author_Institution
    Ruhr-Univ. Bochum, Germany
  • Volume
    26
  • Issue
    21
  • fYear
    1990
  • Firstpage
    1824
  • Lastpage
    1826
  • Abstract
    A high-speed 2:1 time-division multiplexer (MUX) IC has been realised in an advanced self-aligned silicon bipolar technology using 0.8 mu m lithography. The circuit can be operated up to 20 Gbit/s at 5 V supply voltage. This is by far the highest bit rate reported for a MUX in any IC technology.
  • Keywords
    bipolar integrated circuits; elemental semiconductors; integrated circuit technology; multiplexing equipment; silicon; time division multiplexing; 0.8 micron; 20 Gbit/s; 5 V; IC technology; MUX; Si; bipolar technology; bit rate; supply voltage; time-division multiplexer IC;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901167
  • Filename
    83134
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318175