Title :
Extremely high-frequency (24 GHz) InGaAsP diode lasers with excellent modulation efficiency
Author :
Meland, E. ; Holmstrom, R. ; Schlafer, J. ; Lauer, R.B. ; Powazinik, W.
Author_Institution :
GTE Labs. Inc., Waltham, MA, USA
Abstract :
1.3 mu m InGaAsP lasers with 3 dB bandwidths of 24 GHz and intrinsic resonance frequencies in excess of 22 GHz have been successfully fabricated. This is the highest bandwidth ever reported for a semiconductor laser, and the highest resonant frequency for InGaAsP lasers. Excellent modulation efficiencies are observed to high frequencies.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; 1.3 micron; 24 GHz; InGaAsP diode lasers; bandwidths; intrinsic resonance frequencies; modulation efficiency; semiconductor laser; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901169
