Title :
Temperature compensation of the threshold current, differential efficiency, and refractive index of a GaInAs/InP MQW diode laser mounted on a bimetallic heatsink
Author :
Cohen, D.A. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
11/21/1996 12:00:00 AM
Abstract :
The authors use stress from differential thermal expansion to provide temperature compensation of a 1.55 μm MQW laser. Over the temperature range 20-70°C, an equivalent characteristic temperature of 133 K, a reduced drop in the differential efficiency, and nearly complete elimination of the drift in modal wavelength are obtained
Keywords :
III-V semiconductors; compensation; gallium arsenide; heat sinks; indium compounds; laser frequency stability; quantum well lasers; refractive index; thermal expansion; 1.55 micrometre; 20 to 70 degC; GaInAs-InP; MQW diode laser; bimetallic heatsink; differential efficiency; differential thermal expansion; equivalent characteristic temperature; modal wavelength drift; refractive index; temperature compensation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961481
