Title :
Novel T-gate fabrication and high frequency performance for 0.1 mu m-gate InAlAs/InGaAs HEMT
Author :
Enoki, Tsutomu ; Arai, Kenta ; Ishii, Y.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
Cutoff frequencies are measured for sub-0.25 mu m-gate InAlAs/InGaAs/InP HEMTs fabricated with a novel T-gate process using ion-beam etching in conjunction with both electron-beam lithography and photolithography. The cutoff frequency of 200 GHz is demonstrated by 0.12 mu m-gate HEMT.
Keywords :
III-V semiconductors; aluminium compounds; electron beam lithography; gallium arsenide; high electron mobility transistors; indium compounds; photolithography; semiconductor technology; solid-state microwave devices; sputter etching; 0.1 to 0.25 micron; 200 GHz; EHF; HEMT; MM-wave device; T-gate fabrication; cutoff frequency; electron-beam lithography; high frequency performance; ion-beam etching; microwave transistor; millimetre wave operation; photolithography; submicron gate device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910077
