Title :
Insertion-loss-free 1×4 optical switch fabricated using bandgap-energy-controlled selective MOVPE
Author :
Hamamoto, K. ; Sasaki, T. ; Matsumoto, T. ; Komatsu, K.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
11/21/1996 12:00:00 AM
Abstract :
A 1×4 optical switch consisting of a passive 1×4 splitter and four laser diode amplifier (SOA) gates was fabricated using higher-pressure bandgap-energy-controlled selective metal organic vapour phase epitaxy (MOVPE). By using this technique, core layers with a low-loss waveguide of 0.2 dB/mm and an SOA were simultaneously integrated using one-step MOVPE. Insertion-loss-free operation was achieved at a low injection current of 58 mA without any additional SOA
Keywords :
optical elements; photonic switching systems; semiconductor lasers; vapour phase epitaxial growth; 58 mA; bandgap-energy-controlled selective MOVPE; core layers; injection current; insertion-loss-free operation; laser diode amplifier gates; low-loss waveguide; optical matrix switch; passive 1×4 splitter; photonic switching systems;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961499
