DocumentCode
1318435
Title
Resonant cavity enhanced GaInAsSb photodetectors grown by MBE for room temperature operation at 2.35 μm
Author
Shi, Yan ; Zhao, Jian H. ; Lee, Hao ; Sarathy, J. ; Cohen, M. ; Olsen, G.
Author_Institution
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Volume
32
Issue
24
fYear
1996
fDate
11/21/1996 12:00:00 AM
Firstpage
2268
Lastpage
2269
Abstract
Resonant cavity enhanced photodetectors based on GaInAsSb have been successfully fabricated and characterised to operate at a resonant wavelength of 2.35 μm at room temperature. The photodetectors show a maximum quantum efficiency of η=63%, a peak responsivity of R=1.21 A/W and a detectivity D of 5.84×109 cm Hz1/2 W-1 at -0.5 V bias at the resonant wavelength
Keywords
III-V semiconductors; cavity resonators; gallium arsenide; indium compounds; infrared detectors; molecular beam epitaxial growth; photodetectors; semiconductor epitaxial layers; semiconductor growth; -0.5 V; 2.35 micrometre; 63 percent; GaInAsSb; III-V semiconductors; IR detectors; MBE; detectivity; maximum quantum efficiency; peak responsivity; resonant cavity enhanced photodetectors; resonant wavelength; room temperature operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961505
Filename
556808
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