DocumentCode
1318449
Title
0.15 μm T-shaped gate pseudomorphic HEMT fabricated using a new optical lithographic technique
Author
Park, Byung-Sun ; Lee, Jin-Hee ; Yoon, Hyung-Sup ; Yang, Jeon-Wook ; Park, Chul-Soon ; Pyun, Kwang-Eui
Author_Institution
Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Volume
32
Issue
24
fYear
1996
fDate
11/21/1996 12:00:00 AM
Firstpage
2270
Lastpage
2271
Abstract
The authors propose a new optical lithographic technique to form a 0.15 μm length T-shaped gate. The lithographic technique is composed of PSM, low temperature PECVD of SiN, concurrent development and planarisation of the photoresist. By using this technique, a 0.15 μm AlGaAs-InGaAs-GaAs PHEMT was successfully fabricated, and with a transconductance of 498 mS mm and cutoff frequency of 62.4 GHz
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; phase shifting masks; photolithography; plasma CVD; 0.15 micron; 498 mS/mm; 62.4 GHz; AlGaAs-InGaAs-GaAs; III-V semiconductors; PHEMT; PSM; T-shaped gate; concurrent development; cutoff frequency; low temperature PECVD; optical lithographic technique; phase shifting mask; photoresist; planarisation; pseudomorphic HEMT; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961492
Filename
556810
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