Title :
Backgating reduction in MESFETs using an AlAs native oxide buffer layer
Author :
Bond, A.E. ; Lin, Chao-Kun ; MacDougal, M.H. ; Dapkus, P.D. ; Kaviani, K. ; Adamczyk, O. ; Nottenburg, R.
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
fDate :
11/21/1996 12:00:00 AM
Abstract :
The authors present a new approach to the reduction of the backgating effect in GaAs MESFETs. A thin 1200 Å layer of the native oxide AlxOy is used in the buffer layer directly below the conducting channel and increases the backgating threshold to -17 V, while retaining excellent device characteristics
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; semiconductor technology; -17 V; 1200 angstrom; GaAs-AlO; III-V semiconductors; MESFETs; backgating reduction; conducting channel; device characteristics; native oxide buffer layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961529
