Title :
Demonstration of NAND logic switching in InAs/AlSb dual-gate HFETs
Author :
Dvorak, M.W. ; Bolognesi, C.R. ; Chow, D.H.
Author_Institution :
Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada
fDate :
11/21/1996 12:00:00 AM
Abstract :
The authors demonstrate NAND logic switching in InAs/AlSb dual-gate heterostructure field-effect transistors (DG-HFETs). The present NAND gate prototype provides a proof-of-concept for InAs/AlSb HFETs-based small scale digital integrated circuits. With previously demonstrated cut-off frequencies of 93 GHz in 0.5 μm gate InAs/AlSb HFETs, the InAs/AlSb material system appears promising for future high-speed, low-power logic applications
Keywords :
III-V semiconductors; aluminium compounds; field effect logic circuits; field effect transistors; indium compounds; logic gates; 0.5 micron; 93 GHz; III-V semiconductors; InAs-AlSb; NAND logic switching; cut-off frequencies; dual-gate HFETs; high-speed ICs; low-power logic applications; small scale digital integrated circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961526
