Title :
High performance antifuse with planar double dielectrics on Si1-xGex pad for field programmable gate array applications
Author :
Kim, J. ; Park, M.Y. ; Song, Y.H. ; Baek, J.T.
Author_Institution :
Semicond. Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fDate :
11/21/1996 12:00:00 AM
Abstract :
A new antifuse device with a planar metal/dielectric/poly-Si1-xGex/dielectric/metal structure has been proposed for use in FPGAs as a voltage programmable link. The device has low leakage current (~0.01 pA/antifuse) at an operating voltage of 5 V and low on-resistance (~13-15 Ω) with a 1 ms long 12.5 V pulse
Keywords :
MIM devices; dielectric thin films; field programmable gate arrays; leakage currents; 13 to 15 ohm; 5 V; FPGA applications; Si1-xGex pad; SiGe; field programmable gate array; high performance antifuse; low leakage current; metal/dielectric/poly-Si1-xGex /dielectric/metal structure; planar double dielectrics; voltage programmable link;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961504
