Title :
High-power, highly-reliable operation of InGaAs/InGaAsP 0.98 μm lasers with an exponential-shaped flared stripe
Author :
Sagawa, M. ; Hiramoto, K. ; Toyonaka, T. ; Kikawa, T. ; Fujisaki, S. ; Uomi, K.
Author_Institution :
Central Res. Labs., Hitachi Ltd., Tokyo, Japan
fDate :
11/21/1996 12:00:00 AM
Abstract :
A 0.98 μm InGaAs/InGaAsP/GaAs strained quantum-well laser with an exponential-shaped-flared stripe has been developed. Its maximum output power is 40-60% higher than that of ordinary straight-stripe lasers for the same kink-occurrence output power. Testing at 150 mW showed stable operation with an estimated lifetime of >200000 h
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser stability; laser transitions; quantum well lasers; semiconductor device reliability; 0.98 micron; 150 mW; 200000 hr; InGaAs-InGaAsP-GaAs; exponential-shaped flared stripe; high-power operation; highly-reliable operation; stable operation; strained quantum-well laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961483
