Title :
Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 μm at room temperature
Author :
Baranov, A.N. ; Cuminal, Y. ; Boissier, G. ; Alibert, C. ; Joullié, A.
Author_Institution :
Centre d´´Electron. et de Micro-optoelectron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fDate :
11/21/1996 12:00:00 AM
Abstract :
Laser diodes emitting at 2.36 μm at room temperature have been fabricated from a type-II quantum-well heterostructure with an active region consisting of five Ga0.65In0.35As0.15 Sb0.85 wells and GaSb barriers. A pulsed threshold current density of 305 Å/cm2 has been obtained for an 820 μm-long-device at 23°C. The characteristic temperature T0 was found to be 55 K between -30 and 50°C. The differential quantum efficiency being 35% for 600 μm long lasers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; 2.36 micron; 35 percent; 600 to 820 micron; Ga0.65In0.35As0.15Sb0.85 -GaSb; GaInAsSb/GaSb quantum-wells; GaSb barriers; low-threshold laser diodes; pulsed threshold current density; type-II quantum-well heterostructure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961496
