DocumentCode :
1318492
Title :
Measurement of built-in electric field in base of Si/GexSi1-x/Si HBT with linearly-graded Ge profile
Author :
Neugroschel, A. ; Sah, Chih-Tang
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Volume :
32
Issue :
24
fYear :
1996
fDate :
11/21/1996 12:00:00 AM
Firstpage :
2280
Lastpage :
2282
Abstract :
An experimental method is presented for the direct measurement of the built-in electric field in Si/GexSi1-x/Si heterojunction bipolar transistors (HBT) with a linearly-graded Ge profile. The method is based on a comparison of the DC and AC characteristics of Si/GexSi1-x/Si HBTs and reference Si bipolar transistors with the same geometry and doping profiles. The built-in field is determined independently of the density of states, minority-carrier mobility, and heavy-doping effects
Keywords :
Ge-Si alloys; doping profiles; electric field measurement; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; AC characteristics; DC characteristics; Si-GeSi-Si; Si/GexSi1-x/Si HBT; built-in electric field measurement; direct measurement; heterojunction bipolar transistors; linearly-graded Ge profile;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19961528
Filename :
556816
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1318492
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