• DocumentCode
    1318492
  • Title

    Measurement of built-in electric field in base of Si/GexSi1-x/Si HBT with linearly-graded Ge profile

  • Author

    Neugroschel, A. ; Sah, Chih-Tang

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
  • Volume
    32
  • Issue
    24
  • fYear
    1996
  • fDate
    11/21/1996 12:00:00 AM
  • Firstpage
    2280
  • Lastpage
    2282
  • Abstract
    An experimental method is presented for the direct measurement of the built-in electric field in Si/GexSi1-x/Si heterojunction bipolar transistors (HBT) with a linearly-graded Ge profile. The method is based on a comparison of the DC and AC characteristics of Si/GexSi1-x/Si HBTs and reference Si bipolar transistors with the same geometry and doping profiles. The built-in field is determined independently of the density of states, minority-carrier mobility, and heavy-doping effects
  • Keywords
    Ge-Si alloys; doping profiles; electric field measurement; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; AC characteristics; DC characteristics; Si-GeSi-Si; Si/GexSi1-x/Si HBT; built-in electric field measurement; direct measurement; heterojunction bipolar transistors; linearly-graded Ge profile;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961528
  • Filename
    556816
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318492