DocumentCode
1318507
Title
Simulation of substrate current characteristics of submicron MOSFETs
Author
Takeda, Masanori ; Frey, Jesse ; Peng, Zongren ; Goldsman, N.
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Volume
27
Issue
2
fYear
1991
Firstpage
144
Lastpage
146
Abstract
A method for economical prediction of substrate currents in submicron-scale MOSFETs is described and validated by comparison of simulation and experimental results. Two-dimensional energy transport simulation is used to obtain average electron energies and temperature, and hole transport is described using the standard drift-diffusion method. Relatively little computation time is required to give a physically correct picture of device operation on a SUN 3/60 or equivalent workstation.
Keywords
MOS integrated circuits; carrier mobility; digital simulation; electric current; electronic engineering computing; hot carriers; impact ionisation; insulated gate field effect transistors; semiconductor device models; 2D energy transport simulation; average electron energies; drift-diffusion method; electron temperature; hole transport; mixed-mode two-carrier device simulator; submicron MOSFETs; substrate current characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910094
Filename
83170
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