Title :
Simulation of substrate current characteristics of submicron MOSFETs
Author :
Takeda, Masanori ; Frey, Jesse ; Peng, Zongren ; Goldsman, N.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
A method for economical prediction of substrate currents in submicron-scale MOSFETs is described and validated by comparison of simulation and experimental results. Two-dimensional energy transport simulation is used to obtain average electron energies and temperature, and hole transport is described using the standard drift-diffusion method. Relatively little computation time is required to give a physically correct picture of device operation on a SUN 3/60 or equivalent workstation.
Keywords :
MOS integrated circuits; carrier mobility; digital simulation; electric current; electronic engineering computing; hot carriers; impact ionisation; insulated gate field effect transistors; semiconductor device models; 2D energy transport simulation; average electron energies; drift-diffusion method; electron temperature; hole transport; mixed-mode two-carrier device simulator; submicron MOSFETs; substrate current characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910094
