Title :
High power density pulsed X-band heterojunction bipolar transistors
Author :
Adlerstein, M.G. ; Zaitlin, M.P. ; Flynn, G. ; Hoke, W. ; Huang, J. ; Jackson, G. ; Lemonias, P. ; Majarone, R. ; Tong, E.
Author_Institution :
Raytheon Res. Div., Lexington, MA, USA
Abstract :
Abrupt junction Npn AlGaAs/GaAs heterojunction bipolar transistors giving 10 GHz output power density of 6.2 mW/ mu m2 (18.7 W per mm emitter length) are reported. Pulse length was 300 ns with 33% duty cycle. Associated gain and power-added efficiency were 5.0 dB and 46%, respectively. Associated peak power was 561 mW. Peak and average powers were measured as a function of pulse length at fixed duty cycle and found to increase sharply from CW values for pulse lengths less than 1000 ns.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; 10 GHz; 300 ns; 46 percent; 5 dB; 5.2 to 10.9 GHz; 561 mW; associated peak transistor power; associated transistor gain; duty cycle; high power density pulsed X-band transistors; npn AlGaAs-GaAs heterojunction bipolar transistor; output power density; power-added efficiency; pulse length;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910096
