• DocumentCode
    1318586
  • Title

    High power density pulsed X-band heterojunction bipolar transistors

  • Author

    Adlerstein, M.G. ; Zaitlin, M.P. ; Flynn, G. ; Hoke, W. ; Huang, J. ; Jackson, G. ; Lemonias, P. ; Majarone, R. ; Tong, E.

  • Author_Institution
    Raytheon Res. Div., Lexington, MA, USA
  • Volume
    27
  • Issue
    2
  • fYear
    1991
  • Firstpage
    148
  • Lastpage
    149
  • Abstract
    Abrupt junction Npn AlGaAs/GaAs heterojunction bipolar transistors giving 10 GHz output power density of 6.2 mW/ mu m2 (18.7 W per mm emitter length) are reported. Pulse length was 300 ns with 33% duty cycle. Associated gain and power-added efficiency were 5.0 dB and 46%, respectively. Associated peak power was 561 mW. Peak and average powers were measured as a function of pulse length at fixed duty cycle and found to increase sharply from CW values for pulse lengths less than 1000 ns.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; 10 GHz; 300 ns; 46 percent; 5 dB; 5.2 to 10.9 GHz; 561 mW; associated peak transistor power; associated transistor gain; duty cycle; high power density pulsed X-band transistors; npn AlGaAs-GaAs heterojunction bipolar transistor; output power density; power-added efficiency; pulse length;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910096
  • Filename
    83173
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318586