• DocumentCode
    1318607
  • Title

    In situ laser reflectometry applied to the growth of AlxGa1-xAs Bragg reflectors by metalorganic chemical vapour deposition

  • Author

    Frateschi, Newton C. ; Hummel, S. ; Dapkus, P.D.

  • Author_Institution
    Dept. of Electr. Eng./Electrophys., Univ. of Southern California, Los Angeles, CA, USA
  • Volume
    27
  • Issue
    2
  • fYear
    1991
  • Firstpage
    155
  • Lastpage
    157
  • Abstract
    Laser reflectometry has been applied as an in situ growth monitoring tool for the MOCVD growth of Bragg reflectors. Reproducible accuracy of 4 nm of the stop band centre was achieved for AlAs/GaAs mirrors. AlGaAs/AlAs mirrors requiring in situ composition calibration were also successfully grown.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; laser accessories; measurement by laser beam; mirrors; optical workshop techniques; reflectometry; semiconductor growth; vapour phase epitaxial growth; Al xGa 1-xAs; Al xGa 1-xAs Bragg reflectors; AlAs-GaAs; AlAs/GaAs mirrors; MOCVD growth; in situ composition calibration; in situ growth monitoring tool; laser reflectometry; metalorganic chemical vapour deposition; stop band centre;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910100
  • Filename
    83176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318607