Title :
In situ laser reflectometry applied to the growth of AlxGa1-xAs Bragg reflectors by metalorganic chemical vapour deposition
Author :
Frateschi, Newton C. ; Hummel, S. ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng./Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Laser reflectometry has been applied as an in situ growth monitoring tool for the MOCVD growth of Bragg reflectors. Reproducible accuracy of 4 nm of the stop band centre was achieved for AlAs/GaAs mirrors. AlGaAs/AlAs mirrors requiring in situ composition calibration were also successfully grown.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; laser accessories; measurement by laser beam; mirrors; optical workshop techniques; reflectometry; semiconductor growth; vapour phase epitaxial growth; Al xGa 1-xAs; Al xGa 1-xAs Bragg reflectors; AlAs-GaAs; AlAs/GaAs mirrors; MOCVD growth; in situ composition calibration; in situ growth monitoring tool; laser reflectometry; metalorganic chemical vapour deposition; stop band centre;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910100
