Title :
Injection-locking of Q-switched AlGaAs laser with fast saturable absorber
Author :
Stel´makh, N. ; Lourtioz, J.-M. ; Julien, F.H.
Author_Institution :
Inst. d´Electron. Fondamentale, CNRS, Paris XI Univ., Orsay, France
Abstract :
Injection of a weak CW laser beam in a Q-switched AlGaAs laser diode with a fast saturable absorber is shown to produce powerful single-mode picosecond pulses at 0.82 mu m. The saturable absorber regions are obtained by deep implantation of heavy ions through the diode facets. Single-mode operation is achieved with CW injection powers as low as 50 mu W. Peak powers exceeding 1.5 W are detected at the laser output. A time-resolved spectroscopy of the laser pulses reveals an overall downchirp of 1.5 nm.
Keywords :
III-V semiconductors; Q-switching; aluminium compounds; gallium arsenide; high-speed optical techniques; laser modes; optical saturable absorption; semiconductor junction lasers; time resolved spectra; 0.82 micron; 1.5 W; 50 muW; AlGaAs; CW injection powers; IR laser sources; Q-switched AlGaAs laser; deep implantation; diode facets; diode laser injection locking; downchirp; fast saturable absorber; heavy ions; powerful single-mode picosecond pulses; time-resolved spectroscopy; weak CW laser beam;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910103
