Title :
1.3 mu m MQW semiconductor optical amplifiers with high gain and output powers
Author :
Sherlock, G. ; Elton, D.J. ; Perrin, S.D. ; Robertson, Mike J. ; Cooper, Diana Marina
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
Abstract :
1.3 mu m BH semiconductor laser amplifiers are described with MQW active layers. A single pass gain of 31 dB is achieved with a 1000 mu m long device. A 500 mu m long device is realised with a spectral bandwidth of 110 nm and saturated output power of 25 mW.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor junction lasers; 1.3 micron; 1000 micron; 25 mW; 31 dB; 500 micron; BH semiconductor laser amplifiers; InGaAsP; MQW semiconductor optical amplifiers; active layers; buried heterostructure lasers; communications diode lasers; high gain; high output power; saturated output power; single pass gain; spectral bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910106
