DocumentCode :
1318710
Title :
Current Gain and Offset Voltage in an InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor
Author :
Lin, Yu-Shyan ; Ng, Shao-Bin ; Yu, Wen-Fu
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Dong Hwa Univ., Hualien, Taiwan
Volume :
59
Issue :
12
fYear :
2012
Firstpage :
3339
Lastpage :
3343
Abstract :
An In0.5Ga0.5P/GaAs0.93Sb0.07/GaAs heterostructure is grown by metal-organic chemical vapor deposition and demonstrated to be an alternative to InGaP/GaAs systems for use in single heterojunction bipolar transistors (SHBTs). The In0.5Ga0.5P/GaAs0.93Sb0.07/GaAs double heterojunction bipolar transistor (DHBT) device structures are identical to the control SHBTs except for the incorporation of antimony to the base layer. The InGaP/GaAsSb/GaAs DHBT has a lower turn-on voltage than the control InGaP/GaAs SHBT. Details of the effect of the base current on the offset voltage in the studied devices are explored. The dc current gain β of the InGaP/GaAsSb/GaAs DHBT is virtually independent of collector current at 300 K. The current gain of the GaAsSb-based DHBT is greater than 40 at a very small collector current of 1 μA at 300 K. The dependence of the current gain on temperature at various collector currents is discussed. The variation of β with temperature is slight at high currents over the range of 300 K-390 K. Furthermore, the current gain of the InGaP/GaAsSb/GaAs DHBT exhibits almost no dependence on the collector-base voltage VCB, demonstrating the nonblocking “type-II” band lineup at the base/collector heterojunction.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor heterojunctions; In0.5Ga0.5P-GaAs0.93Sb0.07-GaAs; base current; base/collector heterojunction; collector current; collector-base voltage; current 1 muA; dc current gain; double heterojunction bipolar transistor; metal-organic chemical vapor deposition; nonblocking type-II band lineup; offset voltage; semiconductor heterostructure; single heterojunction bipolar transistors; temperature 300 K to 390 K; turn-on voltage; Gallium arsenide; Heterojunction bipolar transistors; Heterojunctions; Indium phosphide; Temperature dependence; Temperature measurement; Band lineup; GaAsSb; double heterojunction bipolar transistor (DHBT); ideality factor; offset voltage; recombination current; single heterojunction bipolar transistor (SHBT); staggered; straddling; turn-on voltage; type I; type II;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2217748
Filename :
6331523
Link To Document :
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