Title :
20 Gbit/s exclusive OR/NOR IC using AlGaAs/GaAs HBTs
Author :
Ichino, H. ; Yamauchi, Y. ; Nittono, T.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
An ultrahigh-speed exclusive-OR/NOR (XOR) IC has been developed for future optical transmission systems. The IC was fabricated with AlGaAs/GaAs HBT technology, for which the fT is about 70 GHz. It operates up to at least 20 Gbit/s with extremely low rise/fall times of 22/14 ps. These are the fastest operating speed and transition times ever reported for an XOR gate using any IC technology.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; integrated logic circuits; optical communication equipment; 14 ps; 20 Gbit/s; 22 ps; 70 GHz; AlGaAs-GaAs; HBT technology; XOR gate; exclusive OR/NOR IC; fall times; heterojunction-bipolar-transistor integrated circuits; operating speed; optical transmission systems; rise times; transition times; ultrahigh-speed OR/NOR IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910115
