• DocumentCode
    1318719
  • Title

    20 Gbit/s exclusive OR/NOR IC using AlGaAs/GaAs HBTs

  • Author

    Ichino, H. ; Yamauchi, Y. ; Nittono, T.

  • Author_Institution
    NTT LSI Labs., Kanagawa, Japan
  • Volume
    27
  • Issue
    2
  • fYear
    1991
  • Firstpage
    180
  • Lastpage
    181
  • Abstract
    An ultrahigh-speed exclusive-OR/NOR (XOR) IC has been developed for future optical transmission systems. The IC was fabricated with AlGaAs/GaAs HBT technology, for which the fT is about 70 GHz. It operates up to at least 20 Gbit/s with extremely low rise/fall times of 22/14 ps. These are the fastest operating speed and transition times ever reported for an XOR gate using any IC technology.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; integrated logic circuits; optical communication equipment; 14 ps; 20 Gbit/s; 22 ps; 70 GHz; AlGaAs-GaAs; HBT technology; XOR gate; exclusive OR/NOR IC; fall times; heterojunction-bipolar-transistor integrated circuits; operating speed; optical transmission systems; rise times; transition times; ultrahigh-speed OR/NOR IC;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910115
  • Filename
    83191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1318719