The effect of deposition conditions on the radiation tolerance of BPSG films

Author

Fuller, Robert ; Evans, Howard ; Gamlen, Carol ; Czagas, Bill ; Morrison, Michael ; Decrosta, David ; Lowry, Robert ; Lenahan, Patrick ; Frye, Christopher

Author_Institution

Harris Semicond., Melbourne, FL, USA

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2565

Lastpage

2571

Abstract

A study has been conducted of the effects of deposition conditions on the radiation hardness of borophosphosilicate glass (BPSG). Films deposited by two common deposition techniques were evaluated using gamma cell testing, electron spin resonance (ESR), and capacitance voltage (CV) measurements. The results indicate that two stoichiometrically similar films can differ greatly in radiation tolerance depending on the deposition conditions

Keywords

BiCMOS integrated circuits; CVD coatings; borosilicate glasses; capacitance; gamma-ray effects; glass structure; paramagnetic resonance; phosphosilicate glasses; plasma CVD; ₆₀Co source; B2O3-P2O5-SiO2; BPSG; BPSG films; BiCMOS test structures; atmospheric pressure CVD; capacitance voltage measurements; charge injection; deposition conditions; electron spin resonance; gamma cell testing; plasma enhanced CVD; radiation hardness; radiation tolerance; stoichiometrically similar films; BiCMOS integrated circuits; Boron; Capacitance-voltage characteristics; Chemical vapor deposition; Glass; Paramagnetic resonance; Semiconductor devices; Semiconductor films; Substrates; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556837

Filename

556837