Title :
Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices
Author :
Emelianov, V.V. ; Sogoyan, A.V. ; Meshurov, O.V. ; Ulimov, V.N. ; Pershenkov, V.S.
Author_Institution :
Res. Inst. of Sci. Instrum., Moscow, Russia
fDate :
12/1/1996 12:00:00 AM
Abstract :
Modeling of the field and thermal dependencies of radiation-induced charge annealing, based on the assumption that the energy level of defects in the oxide is located within the Si forbidden gap, is described and verified. A novel concept of the thermoactivated nature of tunneling exchange between the defects and the Si substrate is proposed
Keywords :
MOSFET; annealing; defect states; electron beam effects; semiconductor device models; tunnelling; MOS devices; MOSFETs; Si; Si forbidden gap; Si substrate; Si-SiO2; Si/SiO2 interface; defect energy level; electron irradiation; field dependence; modeling; oxide; radiation-induced charge annealing; thermal dependence; thermoactivated tunneling exchange; Annealing; Charge carrier processes; Electron traps; Energy states; Instruments; Lattices; MOS devices; Power engineering and energy; Silicon; Tunneling;
Journal_Title :
Nuclear Science, IEEE Transactions on
