Title :
A new model for generation-recombination in silicon depletion regions after neutron irradiation
Author :
Watts, S.J. ; Matheson, J. ; Hopkins-Bond, I.H. ; Holmes-Siedle, A. ; Mohammadzadeh, A. ; Pace, R.
Author_Institution :
Dept. of Phys., Brunel Univ., Uxbridge, UK
fDate :
12/1/1996 12:00:00 AM
Abstract :
Deep level transient spectroscopy has been used to investigate defects in high resistivity silicon diodes after neutron irradiation. Three defects have been correlated with the leakage current. The leakage current in the diodes is found to be a factor of 50 to 600 greater than expected from standard Shockley-Read-Hall (SRH) theory for the observed defect-concentrations. The results can be explained by an enhancement factor due to intercentre transfer of charge between defects in close proximity to each other. It is proposed that a possible mechanism for this process is rapid, direct transfer between a deep donor state and a deep acceptor state. An unidentified defect is observed at EC-0.45±0.02 eV which anneals at ~700°C. This defect is correlated to excess leakage current in both diodes and charge coupled devices
Keywords :
alpha-particle effects; charge-coupled devices; deep level transient spectroscopy; defect states; electron-hole recombination; elemental semiconductors; leakage currents; neutron effects; semiconductor device models; semiconductor diodes; silicon; Shockley-Read-Hall theory; Si depletion regions; alpha particle irradiation; anneal; charge coupled devices; deep acceptor state; deep donor state; deep level transient spectroscopy; defects; generation-recombination model; high resistivity Si diodes; intercentre charge transfer; leakage current; neutron irradiation; p+nn+ diodes; Australia; Charge transfer; Conductivity; Diodes; Leakage current; Neutrons; Nuclear power generation; Physics; Silicon; Spectroscopy;
Journal_Title :
Nuclear Science, IEEE Transactions on
