Time resolved annealing studies of single neutron irradiated avalanche photodiodes

Author

Dai, M. ; Buchinger, E. ; Lee, J.K.P. ; Dautet, H.

Author_Institution

Foster Radiat. Lab., McGill Univ., Montreal, Que., Canada

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2595

Lastpage

2600

Abstract

The dark count rate of avalanche photodiodes was used to monitor single neutron created damage and annealing. The experiments achieve a maximum time resolution of 10 ms. Irradiations are carried out at different temperatures between 5°C and 25°C. Monotonic forward annealing after the neutron interaction was observed with two distinct decay times of 75 ms and 725 ms, respectively. Stepwise forward annealing was observed after this initial period. For some cases reverse stepwise annealing on a time scale up to 30 minutes was detected. The monotonic annealing is discussed in connection with the motion of vacancies in the damage region. The stepwise annealing is suggested to be related to single defect configuration changes

Keywords

annealing; avalanche photodiodes; neutron effects; vacancies (crystal); 30 min; 5 to 25 C; 725 ms; 75 ms; Geiger mode operation; avalanche photodiodes; decay times; monotonic forward annealing; neutron created damage; reverse stepwise annealing; single defect configuration changes; single neutron irradiation; stepwise forward annealing; time resolved annealing; vacancy motion; Annealing; Avalanche breakdown; Avalanche photodiodes; Chromium; Diodes; Laboratories; Neutrons; Pulse generation; Radiation monitoring; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556841

Filename

556841