DocumentCode :
13188
Title :
Broadband high performance laterally diffused metal–oxide–semiconductor power amplifier for mobile two-way radio applications
Author :
Kumar, Narendra ; Anand, Lokesh
Author_Institution :
Dept. of Electr. Eng., Univ. Malaya, Kuala Lumpur, Malaysia
Volume :
9
Issue :
4
fYear :
2015
fDate :
7 2015
Firstpage :
283
Lastpage :
289
Abstract :
This paper highlights achievement of broadband high performance power amplifier (PA) line up for mobile two-way radio applications. In typical two-way radio applications the input radio-frequency signal to the first PA stage comes directly from the voltage controlled oscillator, with typically 3 dBm power. Owing to high output power requirement (~80 W) of mobile radio applications, up to three PA device stages are normally cascaded (pre-driver, driver and final PA stage). The key point in the design of the PA line up concerns the final stage. Here, this paper introduces a design methodology based on parallel-combined impedance matching technique (from theoretical derivation) enables the designers to develop broadband PA with actual PA device impedance (implementation of new generation laterally diffused metal-oxide-semiconductor device). Experimental results demonstrated output power of ~80 W and gain of 45 dB, while preserving efficiency of 55% over the bandwidth from 760 to 870 MHz. According to author´s knowledge, this amplifier demonstrated highest efficiency with 13 V DC supply (operating at 80 W) in UHF broadband frequency with high gain operation (more than 45 dB) up to date.
Keywords :
MIS devices; UHF power amplifiers; impedance matching; mobile radio; power semiconductor devices; UHF broadband frequency; bandwidth 760 MHz to 870 MHz; broadband high performance power amplifier; efficiency 55 percent; laterally diffused metal-oxide-semiconductor power amplifier; mobile two-way radio applications; parallel-combined impedance matching technique; power 80 W; voltage 13 V;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds.2014.0206
Filename :
7156294
Link To Document :
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