Title :
Total dose hardening of SIMOX buried oxides for fully depleted devices in rad-tolerant applications
Author :
Brady, F.T. ; Hughes, H.L. ; McMarr, P.J. ; Mrstik, B.
Author_Institution :
Lockheed Martin Federal Syst., Manassas, VA, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
A total dose hardening treatment is applied to SIMOX buried oxides. Total ionizing dose radiation testing is performed on fully-depleted transistors Fabricated on both hardened and non-hardened substrates. At 200 krads X-ray dose, the front gate shift is reduced from -0.7 to -0.2 V for FETs built on the hardened wafers
Keywords :
MOSFET; SIMOX; X-ray effects; radiation hardening (electronics); semiconductor device testing; -0.2 V; 200 krad; MOSFETs; SIMOX buried oxides; Si; X-ray dose; front gate shift; fully depleted devices; hardened substrates; ionizing dose radiation testing; nonhardened substrates; rad-tolerant applications; total dose hardening; Annealing; CMOS process; Doping; Laboratories; Optical films; Radiation hardening; Semiconductor films; Silicon; Substrates; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
