Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor

Author

Brisset, C. ; Ferlet-Cavrois, V. ; Flament, O. ; Musseau, O. ; Leray, J.L. ; Pelloie, J.L. ; Escoffier, R. ; Michez, A. ; Cirba, C. ; Bordure, G.

Author_Institution

CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2651

Lastpage

2658

Abstract

The trapped charge density in the LOCOS bird´s beak resulting from irradiating a conventional NMOSFET has been analysed using a 2D finite element simulation. This paper shows a maximum of trapped charge density in the bird´s beak region. The resulting voltage shift of the lateral parasitic transistor in the bird´s beak region induces a high leakage current, and prevents any normal circuit operation. The silicon doping level, the supply voltage and the bird´s beak shape are key parameters for device hardening of rad-tolerant technologies

Keywords

MOSFET; finite element analysis; leakage currents; radiation effects; radiation hardening (electronics); semiconductor device models; 2D finite element simulation; LOCOS bird´s beak; NMOSFET; bird´s beak shape; device hardening; doping level; lateral parasitic transistor; leakage current; rad-tolerant technologies; supply voltage; total dose effects; trapped charge density; two-dimensional simulation; voltage shift; CMOS technology; Charge carrier processes; Electron traps; Finite element methods; Leakage current; MOSFET circuits; Poisson equations; Shape; Silicon; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556849

Filename

556849