Title :
W-band monolithic frequency doubler using vertical GaAs varactor diode with n+ buried layer
Author :
Hegazi, G. ; Ezzeddine, A. ; McNally, Peter ; Pande, Krishna ; Rice, P.
Author_Institution :
COMSAT Labs., Clarksburg, MD, USA
Abstract :
A W-band monolithic frequency doubler was designed and fabricated using a vertical GaAs varactor diode that has an n+ buried layer and uses a mesa isolation process. An output power of 30 mW was obtained from this chip at 93 GHz with a conversation efficiency of 12%. This is believed to be the first reported W-band monolithic varactor diode frequency doubler.
Keywords :
III-V semiconductors; MMIC; frequency multipliers; gallium arsenide; solid-state microwave devices; varactors; 12 percent; 30 mW; 93 GHz; EHF; MIMIC; W-band; conversation efficiency; mesa isolation process; monolithic frequency doubler; n + buried layer; output power; semiconductors; varactor diode frequency doubler; vertical GaAs varactor diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910138
