• DocumentCode
    1318936
  • Title

    Effect of nonlinear gain on intensity noise in single-mode semiconductor lasers

  • Author

    Agrawal, Govind P.

  • Author_Institution
    Inst. of Optics, Rochester Univ., NY, USA
  • Volume
    27
  • Issue
    3
  • fYear
    1991
  • Firstpage
    232
  • Lastpage
    234
  • Abstract
    The effect of nonlinear gain on the intensity noise of semiconductor lasers is studied by solving the single-mode rate equation with the Langevin noise term. The analytic expressions for the relative intensity noise and the intensity autocorrelation function are obtained by using a form of the nonlinear gain that is valid even at high operating power levels. These are used to obtain a simple expression for the signal-to-noise ratio (SNR) of the laser output. The SNR is found to saturate to a limiting value of about 30 dB at high powers because of the nonlinear-gain effects related to intraband gain saturation.
  • Keywords
    electron device noise; semiconductor device models; semiconductor junction lasers; 30 dB; Langevin noise term; RIN; SNR; high operating power levels; intensity autocorrelation function; intensity noise; intraband gain saturation; nonlinear gain; relative intensity noise; signal-to-noise ratio; single-mode rate equation; single-mode semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910150
  • Filename
    83228