DocumentCode :
1318936
Title :
Effect of nonlinear gain on intensity noise in single-mode semiconductor lasers
Author :
Agrawal, Govind P.
Author_Institution :
Inst. of Optics, Rochester Univ., NY, USA
Volume :
27
Issue :
3
fYear :
1991
Firstpage :
232
Lastpage :
234
Abstract :
The effect of nonlinear gain on the intensity noise of semiconductor lasers is studied by solving the single-mode rate equation with the Langevin noise term. The analytic expressions for the relative intensity noise and the intensity autocorrelation function are obtained by using a form of the nonlinear gain that is valid even at high operating power levels. These are used to obtain a simple expression for the signal-to-noise ratio (SNR) of the laser output. The SNR is found to saturate to a limiting value of about 30 dB at high powers because of the nonlinear-gain effects related to intraband gain saturation.
Keywords :
electron device noise; semiconductor device models; semiconductor junction lasers; 30 dB; Langevin noise term; RIN; SNR; high operating power levels; intensity autocorrelation function; intensity noise; intraband gain saturation; nonlinear gain; relative intensity noise; signal-to-noise ratio; single-mode rate equation; single-mode semiconductor lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910150
Filename :
83228
Link To Document :
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