Title :
InGaAs/InP-photodiodes with dark current limited by generation-recombination
Author :
Buchali, Fred ; Behrendt, R. ; Heymann, G.
Author_Institution :
Humboldt Univ., Berlin, Germany
Abstract :
From I(V) and C(V) measurements the conclusion is made that among the sources of dark current in InGaAs/InP diodes, generation-recombination current dominates. Four different contributions to the dark from material layers have been identified. The highest generation rate was observed in the InP buffer layer. Various traps causing the dark current in these different layers have also been identified.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; leakage currents; optical communication equipment; photodiodes; semiconductor device models; C-V characteristics; I-V characteristics; InGaAs-InP; InP buffer layer; generation-recombination current; semiconductor; sources of dark current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910152
