DocumentCode
1318986
Title
An 800 MS/s Dual-Residue Pipeline ADC in 40 nm CMOS
Author
Vecchi, Davide ; Mulder, Jan ; Van der Goes, Frank M L ; Westra, Jan R. ; Ayranci, Emre ; Ward, Christopher M. ; Wan, Jiansong ; Bult, Klaas
Author_Institution
Broadcom Netherlands B.V., Bunnik, Netherlands
Volume
46
Issue
12
fYear
2011
Firstpage
2834
Lastpage
2844
Abstract
This paper presents a 12-bit dual-residue pipeline ADC allowing the use of low gain and low bandwidth residue amplifiers to achieve 59 dB peak SNDR at 800 MSample/s. The dual-residue architecture is insensitive to the open-loop gain and the bandwidth of the residue amplifiers. However, their offset limits the accuracy of the entire ADC and therefore a background offset calibration technique was implemented. The high sampling speed was obtained through four times interleaving, requiring gain and offset calibration between the interleaved ADC lanes. The ADC was realized in a standard 40 nm CMOS technology, operates from a dual 1 V/2.5 V power supply, utilizes an input range of 1.2 V peak-to-peak differential, and consumes 105 mW.
Keywords
CMOS integrated circuits; amplifiers; analogue-digital conversion; calibration; CMOS technology; background offset calibration technique; dual-residue pipeline ADC architecture; high sampling speed; low bandwidth residue amplifiers; open-loop gain; power 105 mW; size 40 nm; voltage 1 V; voltage 1.2 V; voltage 2.5 V; word length 12 bit; AC-DC power converters; CMOS integrated circuits; Calibration; Interleaved codes; Interpolation; Low power electronics; ADC; CMOS; FOM; analog-to-digital conversion; calibration; dual-residue; high-resolution ADC; high-speed ADC; low-power; offset calibration; pipeline; time-interleaving; zero-crossing;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2011.2164301
Filename
6017145
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