Title :
Non-destructive measurements for CMOS devices using charge-collection techniques
Author :
Edmonds, Larry ; Swift, Gary ; Johnston, Alla
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
Results of an experiment providing initial validation of the use of charge-collection spectroscopy to measure the over-layer and epitaxial thickness and substrate diffusion length are given for several CMOS SRAM test devices
Keywords :
CMOS memory circuits; SRAM chips; integrated circuit measurement; CMOS SRAM device; charge-collection spectroscopy; epitaxial thickness; nondestructive measurement; over-layer thickness; substrate diffusion length; Charge measurement; Current measurement; Length measurement; Nuclear measurements; Semiconductor process modeling; Space technology; Spectroscopy; Substrates; Testing; Thickness measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
