• DocumentCode
    1319051
  • Title

    SEU-hardened storage cell validation using a pulsed laser

  • Author

    Velazco, R. ; Calin, T. ; Nicolaidis, Michael ; Moss, S.C. ; LaLumondiere, S.D. ; Tran, V.T. ; Koga, R.

  • Author_Institution
    LSR, IMAG, Grenoble, France
  • Volume
    43
  • Issue
    6
  • fYear
    1996
  • fDate
    12/1/1996 12:00:00 AM
  • Firstpage
    2843
  • Lastpage
    2848
  • Abstract
    Laser tests performed on a prototype chip to validate new SEU-hardened storage cell designs revealed unexpected latch-up and single-event upset phenomena. The investigations that identified their location show the existence of a topology-dependent dual node upset mechanism. Design solutions are suggested to avoid its occurrence
  • Keywords
    integrated circuit testing; integrated memory circuits; measurement by laser beam; radiation hardening (electronics); SEU hardening; latch-up; pulsed laser testing; single-event upset; storage cell; validation; Aerospace testing; Circuit testing; Laser beams; Microelectronics; Optical design; Optical pulses; Performance evaluation; Prototypes; Pulse circuits; Pulse measurements;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.556875
  • Filename
    556875
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1319051