DocumentCode
1319053
Title
Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriers
Author
Wood, T.H. ; Chang, T.Y. ; Pastalan, John Z. ; Burrus, C.A. ; Sauer, N.J. ; Johnson, Brett C.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
27
Issue
3
fYear
1991
Firstpage
257
Lastpage
259
Abstract
Quaternary AlGaInAs is demonstrated to be an excellent barrier material for long-wavelength quantum well modulators. In addition to lower trap density than ternary AlInAs, the low valence-band discontinuity results in saturation intensities at least a factor of 30 higher than InGaAs wells with InP barriers. Decreasing barrier thicknesses increases saturation intensities by an additional factor of 5.
Keywords
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; optical saturable absorption; semiconductor quantum wells; AlGaInAs barriers; GaInAs multiple quantum wells; GaInAs-AlGaInAs; electroabsorption saturation; long-wavelength; optical saturation intensities; quantum well modulators; trap density; valence-band discontinuity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910166
Filename
83244
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