DocumentCode
1319069
Title
Comparison of beam blanking SEM and heavy ion SEU tests on NASDA´s 64 kbit SRAMs
Author
Pesce, Anastasia ; Aoki, J. ; Hada, Takashi ; Nemoto, Norio ; Akutsu, Takao ; Matsuda, Sumio ; Igarashi, Toshio ; Baba, Shinji
Author_Institution
NASDA, Tsukuba Space Center, Japan
Volume
43
Issue
6
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
2856
Lastpage
2861
Abstract
Beam Blanking SEM (Beam Blanking Scanning Electron Microscope) was successfully used to measure and to map soft error sites on 64 kbit memory cells. Cross-section versus beam current and LET curves derived from BBSEM and heavy ion tests, respectively, have been compared. A linear relation between BBSEM current and heavy ion LET has been suggested
Keywords
SRAM chips; integrated circuit testing; ion beam effects; scanning electron microscopy; 64 kbit; LET; SRAM; beam blanking SEM; cross-section; heavy ion SEU testing; memory cell; soft errors; Blanking; Electron beams; Extraterrestrial measurements; Low earth orbit satellites; MOSFETs; Random access memory; Scanning electron microscopy; Single event upset; Space missions; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.556877
Filename
556877
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