Title :
Comparison of bulk buried heterostructure and multiple quantum well laser amplifier switches
Author :
Cavanagh, B.P. ; Marshall, I.W. ; Sherlock, G. ; Wickes, H.
Author_Institution :
British Telecommun. Res. Labs., Martlesham Heath, Ipswich, UK
Abstract :
Multiple quantum well (MQW) and bulk laser amplifier switches are directly compared by analysis of the switching speed and the wavelength dependence of contrast (extinction ratio) and noise. The MQW device is found to be three times faster, with 20 dB less contrast and 12.5 dB less loss at optimum wavelength. It is thus shown that MQW devices are more suitable for use as fast switches.
Keywords :
electron device noise; laser beam applications; optical communication equipment; optical switches; semiconductor junction lasers; MQW device; bulk buried heterostructure; contrast; extinction ratio; laser amplifier switches; multiple quantum well; noise; semiconductor lasers; switching speed; wavelength dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910169
