• DocumentCode
    1319070
  • Title

    Comparison of bulk buried heterostructure and multiple quantum well laser amplifier switches

  • Author

    Cavanagh, B.P. ; Marshall, I.W. ; Sherlock, G. ; Wickes, H.

  • Author_Institution
    British Telecommun. Res. Labs., Martlesham Heath, Ipswich, UK
  • Volume
    27
  • Issue
    3
  • fYear
    1991
  • Firstpage
    263
  • Lastpage
    265
  • Abstract
    Multiple quantum well (MQW) and bulk laser amplifier switches are directly compared by analysis of the switching speed and the wavelength dependence of contrast (extinction ratio) and noise. The MQW device is found to be three times faster, with 20 dB less contrast and 12.5 dB less loss at optimum wavelength. It is thus shown that MQW devices are more suitable for use as fast switches.
  • Keywords
    electron device noise; laser beam applications; optical communication equipment; optical switches; semiconductor junction lasers; MQW device; bulk buried heterostructure; contrast; extinction ratio; laser amplifier switches; multiple quantum well; noise; semiconductor lasers; switching speed; wavelength dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910169
  • Filename
    83247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1319070