DocumentCode
1319133
Title
Single Event Upset cross sections at various data rates
Author
Reed, R.A. ; Carts, M.A. ; Marshall, P.W. ; Marshall, C.J. ; Buchner, S. ; Macchia, M. La ; Mathes, B. ; McMorrow, D.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
43
Issue
6
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
2862
Lastpage
2867
Abstract
We present data which show that Single Event Upset (SEU) cross section varies linearly with frequency for most devices tested. We show that the SEU cross section can increase dramatically away from a linear relationship when the test setup is not optimized, or when testing near the maximum operating frequency. We also observe non-linear behavior in some complex circuit topologies. Knowledge of the relationship between SEU cross section and frequency is important for estimates of on-orbit SEU rates
Keywords
ion beam effects; data rate; frequency dependence; semiconductor device; single event upset cross section; space environment; Circuit testing; Clocks; Coupling circuits; Delay; Frequency estimation; Gallium arsenide; Laboratories; Logic devices; Single event upset; Space technology;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.556878
Filename
556878
Link To Document